Double-velocity IMPATT diodes
A new IMPATT diode structure is proposed. The device incorporates a heterojunction between materials having different electric field saturated carrier velocities. Analysis shows that such a diode can have significantly higher dc-to-microwave-power conversion efficiencies than conventional Read IMPAT...
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| Veröffentlicht in: | IEEE transactions on electron devices 1979-05, Vol.26 (5), p.817-819 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext bestellen |
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| Zusammenfassung: | A new IMPATT diode structure is proposed. The device incorporates a heterojunction between materials having different electric field saturated carrier velocities. Analysis shows that such a diode can have significantly higher dc-to-microwave-power conversion efficiencies than conventional Read IMPATT diodes. |
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| ISSN: | 0018-9383 1557-9646 |
| DOI: | 10.1109/T-ED.1979.19502 |