On the determination of the spatial distribution of deep centers in semiconducting thin films from capacitance transient spectroscopy

On the determination of the spatial distribution of deep centers in semiconducting thin films from capacitance transient spectroscopy

It is pointed out that a widely used simple formula may give rise to serious errors in profiling deep level concentrations from capacitance transient experiments. A correction formula is derived based on the space-charge analysis.

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Veröffentlicht in:Journal of applied physics 1982-01, Vol.53 (3), p.1809-1811
Hauptverfasser: Zohta, Yasuhito, Watanabe, Miyoko Oku
Format: Artikel
Sprache:eng
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Zusammenfassung:It is pointed out that a widely used simple formula may give rise to serious errors in profiling deep level concentrations from capacitance transient experiments. A correction formula is derived based on the space-charge analysis.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.330683