Dynamic observation of defect annealing in CdTe at lattice resolution

Dynamic observation of defect annealing in CdTe at lattice resolution

Atomic-level events in the semiconductor material CdTe have been documented directly with real-time video recording, using a high resolution transmission electron microscope equipped with an image pick-up and display system. Among the various solid-state reactions observed were dislocation motion by...

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Veröffentlicht in:Nature (London) 1982-07, Vol.298 (5870), p.127-131
Hauptverfasser: Sinclair, R, Ponce, F. A, Yamashita, T, Smith, David J, Camps, R. A, Freeman, L. A, Erasmus, S. J, Nixon, W. C, Smith, K. C. A, Catto, C. J. D
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Sprache:eng
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Humanities and Social Sciences
multidisciplinary
Science
Science (multidisciplinary)
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Zusammenfassung:Atomic-level events in the semiconductor material CdTe have been documented directly with real-time video recording, using a high resolution transmission electron microscope equipped with an image pick-up and display system. Among the various solid-state reactions observed were dislocation motion by slip, dislocation climb by diffusion and the annealing of several types of defects.
ISSN:0028-0836
1476-4687
DOI:10.1038/298127a0