Surface Defects of Closed-System-Grown Cd sub x Hg sub 1x Te Epitaxial Layers
The interaction of the surface of the Cd sub x Hg sub 1x Te epitaxial layers grown by liquid phase epitaxy in a closed system with the vapor phase is studied. Depending on the actual system cooling procedures after the decanting of the solution, defects are found which appear on the epilayer surface...
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Veröffentlicht in: | Physica status solidi. A, Applied research Applied research, 1983-03, Vol.76 (1), p.71-74 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The interaction of the surface of the Cd sub x Hg sub 1x Te epitaxial layers grown by liquid phase epitaxy in a closed system with the vapor phase is studied. Depending on the actual system cooling procedures after the decanting of the solution, defects are found which appear on the epilayer surface in the form of drops of solidified solution or pits. These defects originate from processes associated with the condensation of the solution vapor. Planar surface epilayers can be obtained by properly controlling these processes.--AA |
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ISSN: | 0031-8965 |