A defect etchant for single crystal GaSb

A new defect etchant for GaSb is described. Concentrated HCl and H sub 2 O sub 2 in the volume ratio 2:1 is shown to give good results. Reproducible results are given for {100} and {111} Sb surfaces with suitable surface pretreatment and constant agitation to remove gaseous products. Etching on the {111} Ga was not possible and results for the {110} surfaces were not as reproducible. Growth striations in both doped and undoped crystals are also readily revealed by this etchant.--M.G.S.