SEM-EBIC and traveling light spot diffusion length measurements: Normally irradiated charge-collecting diode
An analysis of the induced current in a normally irradiated diode by monochromatic light or a SEM electron beam is given, which can be used to determine the diffusion length. Two light sources are considered: a traveling light spot and uniform illumination with part of the sample containing the diod...
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| Veröffentlicht in: | IEEE transactions on electron devices 1983-06, Vol.30 (6), p.577-580 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext bestellen |
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| Zusammenfassung: | An analysis of the induced current in a normally irradiated diode by monochromatic light or a SEM electron beam is given, which can be used to determine the diffusion length. Two light sources are considered: a traveling light spot and uniform illumination with part of the sample containing the diode shadowed by a knife-edge mask. The diffusion length is determined by readily computed numerical calculations. |
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| ISSN: | 0018-9383 1557-9646 |
| DOI: | 10.1109/T-ED.1983.21171 |