Current Instabilities in Thin Cadmium Selenide Films

A study of dark current instabilities in CdSe layers up to 1 mu m thick is reported. The conduction electron concentration in the layers was 10 exp 24 m exp 3 and the donor ground state level was 0.14 eV below the bottom of the conduction band. 8 ref.--D.O.N.

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Veröffentlicht in:Physica status solidi. A, Applied research Applied research, 1982-12, Vol.74 (2), p.K131-K135
Hauptverfasser: Vashpanov, Yu. A., Serdyuk, V. V., Ae. Smyntyna, V.
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container_issue 2
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container_title Physica status solidi. A, Applied research
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creator Vashpanov, Yu. A.
Serdyuk, V. V.
Ae. Smyntyna, V.
description A study of dark current instabilities in CdSe layers up to 1 mu m thick is reported. The conduction electron concentration in the layers was 10 exp 24 m exp 3 and the donor ground state level was 0.14 eV below the bottom of the conduction band. 8 ref.--D.O.N.
doi_str_mv 10.1002/pssa.2210740250
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subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
High-field and nonlinear effects
Physics
title Current Instabilities in Thin Cadmium Selenide Films
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