Current Instabilities in Thin Cadmium Selenide Films

A study of dark current instabilities in CdSe layers up to 1 mu m thick is reported. The conduction electron concentration in the layers was 10 exp 24 m exp 3 and the donor ground state level was 0.14 eV below the bottom of the conduction band. 8 ref.--D.O.N.

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Bibliographische Detailangaben
Veröffentlicht in:	Physica status solidi. A, Applied research Applied research, 1982-12, Vol.74 (2), p.K131-K135
Hauptverfasser:	Vashpanov, Yu. A., Serdyuk, V. V., Ae. Smyntyna, V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology High-field and nonlinear effects Physics
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	A study of dark current instabilities in CdSe layers up to 1 mu m thick is reported. The conduction electron concentration in the layers was 10 exp 24 m exp 3 and the donor ground state level was 0.14 eV below the bottom of the conduction band. 8 ref.--D.O.N.
ISSN:	0031-8965 1521-396X
DOI:	10.1002/pssa.2210740250