Resistance anomaly of Nb-Si thin films

A resistance anomaly of very thin Nb–Si films is reported. The anomaly is characterized by a sudden drop in the resistance by a factor of ∼10 3 at a temperature ( T D ) of ∼180 K without any application of pressure. The lower resistance-state (∼zero Ω) is constant to 4.2 K so far as we measured. T D...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Japanese Journal of Applied Physics 1983-08, Vol.22 (8), p.523-524
Hauptverfasser:	OGUSHI, T, OBARA, K, ANAYAMA, T
Format:	Artikel
Sprache:	eng
Schlagworte:	Analysing. Testing. Standards Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Electrical and thermal conduction in crystalline metals and alloys Electronic conduction in metals and alloys Electronic transport in condensed matter Exact sciences and technology Materials science Measurement of properties and materials state Metals, semimetals and alloys Metals. Metallurgy Nondestructive testing Physics Specific materials
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A resistance anomaly of very thin Nb–Si films is reported. The anomaly is characterized by a sudden drop in the resistance by a factor of ∼10 3 at a temperature ( T D ) of ∼180 K without any application of pressure. The lower resistance-state (∼zero Ω) is constant to 4.2 K so far as we measured. T D depends on measuring current and on magnetic fields. The anomaly has properties very similar to those of CuCl under high pressure .
ISSN:	0021-4922 1347-4065
DOI:	10.1143/jjap.22.l523