Planar monolithic integration of a photodiode and a GaAs preamplifier

A monolithic optical receiver chip consisting of a pin photodiode and a transimpedance preamplifier on a GaAs semi-insulating substrate is reported. The epitaxial layers for the photodiode are grown by hydride vapor phase epitaxy and the circuit elements are fabricated by selective ion implantation...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Applied physics letters 1983-11, Vol.43 (9), p.821-823
Hauptverfasser:	KOLBAS, R. M, ABROKWAH, J, CARNEY, J. K, BRADSHAW, D. H, ELMER, B. R, BIARD, J. R
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Integrated circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A monolithic optical receiver chip consisting of a pin photodiode and a transimpedance preamplifier on a GaAs semi-insulating substrate is reported. The epitaxial layers for the photodiode are grown by hydride vapor phase epitaxy and the circuit elements are fabricated by selective ion implantation in the semi-insulating substrate. The integration scheme results in a planar surface which simplifies the processing of optoelectronic integrated chips.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.94507