Tantalum silicide films deposited by dc sputtering
Tantalum disilicide films were deposited by conventional dc sputtering from a nominally stoichiometric cathode. The film characteristics were analyzed by x-ray diffraction, backscattering, electron microprobe and electron transimission microscopy. The film resistivity and stresses were also measured...
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| Veröffentlicht in: | Journal of electronic materials 1981-01, Vol.10 (1), p.59-93 |
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| Sprache: | eng |
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| container_end_page | 93 |
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| container_issue | 1 |
| container_start_page | 59 |
| container_title | Journal of electronic materials |
| container_volume | 10 |
| creator | Angilello, J. Baglin, J. E. E. Cardone, F. Dempsey, J. J. d'Heurle, F. M. Irene, E. A. Maclnnes, R. Petersson, C. S. Savoy, R. Segmuller, A. P. Tierney, E. |
| description | Tantalum disilicide films were deposited by conventional dc sputtering from a nominally stoichiometric cathode. The film characteristics were analyzed by x-ray diffraction, backscattering, electron microprobe and electron transimission microscopy. The film resistivity and stresses were also measured. The effects of heat treatments up to 1000 degree C were systematically investigated. After a 1000 degree C anneal, resistivities of 45-60 mu Omega cm can be achieved reproducibly. |
| doi_str_mv | 10.1007/BF02654902 |
| format | Article |
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After a 1000 degree C anneal, resistivities of 45-60 mu Omega cm can be achieved reproducibly.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/BF02654902</identifier><language>eng</language><ispartof>Journal of electronic materials, 1981-01, Vol.10 (1), p.59-93</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-cfc44fe8c0c8e91bbdbaf8582ace520e97b081289bd644e4a26230a71b6025fb3</citedby><cites>FETCH-LOGICAL-c291t-cfc44fe8c0c8e91bbdbaf8582ace520e97b081289bd644e4a26230a71b6025fb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Angilello, J.</creatorcontrib><creatorcontrib>Baglin, J. E. 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| ispartof | Journal of electronic materials, 1981-01, Vol.10 (1), p.59-93 |
| issn | 0361-5235 1543-186X |
| language | eng |
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| title | Tantalum silicide films deposited by dc sputtering |
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