Tantalum silicide films deposited by dc sputtering

Tantalum silicide films deposited by dc sputtering

Tantalum disilicide films were deposited by conventional dc sputtering from a nominally stoichiometric cathode. The film characteristics were analyzed by x-ray diffraction, backscattering, electron microprobe and electron transimission microscopy. The film resistivity and stresses were also measured...

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Veröffentlicht in:Journal of electronic materials 1981-01, Vol.10 (1), p.59-93
Hauptverfasser: Angilello, J., Baglin, J. E. E., Cardone, F., Dempsey, J. J., d'Heurle, F. M., Irene, E. A., Maclnnes, R., Petersson, C. S., Savoy, R., Segmuller, A. P., Tierney, E.
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Sprache:eng
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Zusammenfassung:Tantalum disilicide films were deposited by conventional dc sputtering from a nominally stoichiometric cathode. The film characteristics were analyzed by x-ray diffraction, backscattering, electron microprobe and electron transimission microscopy. The film resistivity and stresses were also measured. The effects of heat treatments up to 1000 degree C were systematically investigated. After a 1000 degree C anneal, resistivities of 45-60 mu Omega cm can be achieved reproducibly.
ISSN:0361-5235
1543-186X
DOI:10.1007/BF02654902