On phonon focussing in silicon

Phonon flux density in silicon as a function of direction is calculated. It is observed that the flux density corresponding to (quasi-)longitudinal polarization branch exhibits moderate dependence on direction. But in the case of the two (quasi-)transverse branches, the density vs direction curves a...

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Veröffentlicht in:Solid state communications 1983-02, Vol.45 (5), p.455-458
1. Verfasser: Joshi, Y.P.
Format: Artikel
Sprache:eng
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Zusammenfassung:Phonon flux density in silicon as a function of direction is calculated. It is observed that the flux density corresponding to (quasi-)longitudinal polarization branch exhibits moderate dependence on direction. But in the case of the two (quasi-)transverse branches, the density vs direction curves are characterized with sharp peaks indicating strong concentration of phonons in certain directions, and correspondingly there is marked deconcentration in other directions.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(83)90320-4