On phonon focussing in silicon
Phonon flux density in silicon as a function of direction is calculated. It is observed that the flux density corresponding to (quasi-)longitudinal polarization branch exhibits moderate dependence on direction. But in the case of the two (quasi-)transverse branches, the density vs direction curves a...
Gespeichert in:
Veröffentlicht in: | Solid state communications 1983-02, Vol.45 (5), p.455-458 |
---|---|
1. Verfasser: | |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Phonon flux density in silicon as a function of direction is calculated. It is observed that the flux density corresponding to (quasi-)longitudinal polarization branch exhibits moderate dependence on direction. But in the case of the two (quasi-)transverse branches, the density vs direction curves are characterized with sharp peaks indicating strong concentration of phonons in certain directions, and correspondingly there is marked deconcentration in other directions. |
---|---|
ISSN: | 0038-1098 1879-2766 |
DOI: | 10.1016/0038-1098(83)90320-4 |