The influence of oxygen during the irradiation of silicon and germanium
A detailed literature review resolves some contradictions regarding the nature and cause of @rod-like@ {113J plane defects in electron irradiated Si and Ge. Impurity initiated and self-interstitial models are examined and oxidation effects detailed. Discussion of reported fault displacement evolves...
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| Veröffentlicht in: | Crystal research and technology (1979) 1981, Vol.16 (1), p.K1-K3 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | A detailed literature review resolves some contradictions regarding the nature and cause of @rod-like@ {113J plane defects in electron irradiated Si and Ge. Impurity initiated and self-interstitial models are examined and oxidation effects detailed. Discussion of reported fault displacement evolves a useful Burgers vector.11 refs.--J.V.R. |
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| ISSN: | 0023-4753 0232-1300 1521-4079 |
| DOI: | 10.1002/crat.19810160128 |