Intensity-reversal in the donor bound exciton luminescence of GaAs
A self-reversal model is presented to explain the luminescence dependence of the donor bound exciton intensity. The line broadening mechanism is attributed to rotational interaction with non-rigid rotator states. Line reversal results from absorption by non-broadened states near the crystal surface....
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| Veröffentlicht in: | Solid state communications 1983-01, Vol.46 (6), p.473-476 |
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| container_end_page | 476 |
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| container_issue | 6 |
| container_start_page | 473 |
| container_title | Solid state communications |
| container_volume | 46 |
| creator | Reynolds, D.C. Langer, D.W. Litton, C.W. McCoy, G.L. Bajaj, K.K. |
| description | A self-reversal model is presented to explain the luminescence dependence of the donor bound exciton intensity. The line broadening mechanism is attributed to rotational interaction with non-rigid rotator states. Line reversal results from absorption by non-broadened states near the crystal surface. The absence of a similar excitation intensity dependence for acceptor bound excitons is explained. |
| doi_str_mv | 10.1016/0038-1098(83)90580-X |
| format | Article |
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| ispartof | Solid state communications, 1983-01, Vol.46 (6), p.473-476 |
| issn | 0038-1098 1879-2766 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_23277008 |
| source | Elsevier ScienceDirect Journals Complete |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics |
| title | Intensity-reversal in the donor bound exciton luminescence of GaAs |
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