Intensity-reversal in the donor bound exciton luminescence of GaAs

A self-reversal model is presented to explain the luminescence dependence of the donor bound exciton intensity. The line broadening mechanism is attributed to rotational interaction with non-rigid rotator states. Line reversal results from absorption by non-broadened states near the crystal surface....

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Veröffentlicht in:	Solid state communications 1983-01, Vol.46 (6), p.473-476
Hauptverfasser:	Reynolds, D.C., Langer, D.W., Litton, C.W., McCoy, G.L., Bajaj, K.K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	A self-reversal model is presented to explain the luminescence dependence of the donor bound exciton intensity. The line broadening mechanism is attributed to rotational interaction with non-rigid rotator states. Line reversal results from absorption by non-broadened states near the crystal surface. The absence of a similar excitation intensity dependence for acceptor bound excitons is explained.
ISSN:	0038-1098 1879-2766
DOI:	10.1016/0038-1098(83)90580-X