Injected carrier effects on modal properties of 1.55 mu m GaInAsP lasers
The authors report the observation of a strong variation of the active layer refractive index with the current in a 1.55 mu m "gain-guiding" GaInAsP laser 12 mu m wide. A negative refractive index change of several 10 super(-2) has been found between the center and the edge of the stripe f...
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Veröffentlicht in: | IEEE journal of quantum electronics 1983-01, Vol.QE-19 (6), p.969-974 |
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creator | Bouley, J-C Charil, J Sorel, Y Chaminant, G |
description | The authors report the observation of a strong variation of the active layer refractive index with the current in a 1.55 mu m "gain-guiding" GaInAsP laser 12 mu m wide. A negative refractive index change of several 10 super(-2) has been found between the center and the edge of the stripe from a transverse mode distribution analysis and a study of the wavelength shift of the longitudinal modes with the current. The authors have shown that this effect can explain the increase of threshold current of a gain-guiding laser for a small stripe width. They have observed, moreover, a time dependence of the transverse mode width in the transient regime in pulsed operation and a broadening of a time average spectrum of a stabilized single longitudinal mode laser under current modulation. They have also shown that these two last effects can be explained by the refraction index current dependence. |
doi_str_mv | 10.1109/JQE.1983.1071969 |
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A negative refractive index change of several 10 super(-2) has been found between the center and the edge of the stripe from a transverse mode distribution analysis and a study of the wavelength shift of the longitudinal modes with the current. The authors have shown that this effect can explain the increase of threshold current of a gain-guiding laser for a small stripe width. They have observed, moreover, a time dependence of the transverse mode width in the transient regime in pulsed operation and a broadening of a time average spectrum of a stabilized single longitudinal mode laser under current modulation. They have also shown that these two last effects can be explained by the refraction index current dependence.</description><identifier>ISSN: 0018-9197</identifier><identifier>DOI: 10.1109/JQE.1983.1071969</identifier><language>eng</language><ispartof>IEEE journal of quantum electronics, 1983-01, Vol.QE-19 (6), p.969-974</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Bouley, J-C</creatorcontrib><creatorcontrib>Charil, J</creatorcontrib><creatorcontrib>Sorel, Y</creatorcontrib><creatorcontrib>Chaminant, G</creatorcontrib><title>Injected carrier effects on modal properties of 1.55 mu m GaInAsP lasers</title><title>IEEE journal of quantum electronics</title><description>The authors report the observation of a strong variation of the active layer refractive index with the current in a 1.55 mu m "gain-guiding" GaInAsP laser 12 mu m wide. A negative refractive index change of several 10 super(-2) has been found between the center and the edge of the stripe from a transverse mode distribution analysis and a study of the wavelength shift of the longitudinal modes with the current. The authors have shown that this effect can explain the increase of threshold current of a gain-guiding laser for a small stripe width. They have observed, moreover, a time dependence of the transverse mode width in the transient regime in pulsed operation and a broadening of a time average spectrum of a stabilized single longitudinal mode laser under current modulation. 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A negative refractive index change of several 10 super(-2) has been found between the center and the edge of the stripe from a transverse mode distribution analysis and a study of the wavelength shift of the longitudinal modes with the current. The authors have shown that this effect can explain the increase of threshold current of a gain-guiding laser for a small stripe width. They have observed, moreover, a time dependence of the transverse mode width in the transient regime in pulsed operation and a broadening of a time average spectrum of a stabilized single longitudinal mode laser under current modulation. They have also shown that these two last effects can be explained by the refraction index current dependence.</abstract><doi>10.1109/JQE.1983.1071969</doi><tpages>6</tpages></addata></record> |
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title | Injected carrier effects on modal properties of 1.55 mu m GaInAsP lasers |
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