Injected carrier effects on modal properties of 1.55 mu m GaInAsP lasers
The authors report the observation of a strong variation of the active layer refractive index with the current in a 1.55 mu m "gain-guiding" GaInAsP laser 12 mu m wide. A negative refractive index change of several 10 super(-2) has been found between the center and the edge of the stripe f...
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Veröffentlicht in: | IEEE journal of quantum electronics 1983-01, Vol.QE-19 (6), p.969-974 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The authors report the observation of a strong variation of the active layer refractive index with the current in a 1.55 mu m "gain-guiding" GaInAsP laser 12 mu m wide. A negative refractive index change of several 10 super(-2) has been found between the center and the edge of the stripe from a transverse mode distribution analysis and a study of the wavelength shift of the longitudinal modes with the current. The authors have shown that this effect can explain the increase of threshold current of a gain-guiding laser for a small stripe width. They have observed, moreover, a time dependence of the transverse mode width in the transient regime in pulsed operation and a broadening of a time average spectrum of a stabilized single longitudinal mode laser under current modulation. They have also shown that these two last effects can be explained by the refraction index current dependence. |
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ISSN: | 0018-9197 |
DOI: | 10.1109/JQE.1983.1071969 |