Variable-range hopping in evaporated annealed films of the amorphous chalcogenides GeTe and SnTe
A letter. Previous observations showed that whereas amorphous GeTe annealed to higher resistivities, SnTe films underwent a decrease in resistivity during annealing. The data is analysed further to show that after annealing the resistivity varies inversely as T exp 4 (Mott Law). behaviour is explain...
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| Veröffentlicht in: | Journal of non-crystalline solids 1978-01, Vol.29 (1), p.135-137 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | A letter. Previous observations showed that whereas amorphous GeTe annealed to higher resistivities, SnTe films underwent a decrease in resistivity during annealing. The data is analysed further to show that after annealing the resistivity varies inversely as T exp 4 (Mott Law). behaviour is explained in terms of a range of activation energies for the conduction mechanism (variable-range hopping). 10 ref.--M.G.S. |
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| ISSN: | 0022-3093 1873-4812 |
| DOI: | 10.1016/0022-3093(78)90147-3 |