Nucleation and growth rate of a -Si alloys
From fitting the crystallization rate to an Arrhenius rate expression with a single activation energy we found that it is possible to distinguish a purely amorphous silicon sample from one having trace crystallinity. Whenever microcrystallites are present whether from heavy P doping or heat treatmen...
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Veröffentlicht in: | Applied physics letters 1983-01, Vol.42 (1), p.90-92 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | From fitting the crystallization rate to an Arrhenius rate expression with a single activation energy we found that it is possible to distinguish a purely amorphous silicon sample from one having trace crystallinity. Whenever microcrystallites are present whether from heavy P doping or heat treatment, the ‘‘activation energy’’ is approximately 1 eV, whereas purely amorphous silicon has an activation energy of 3–4 eV. In other words, the exponent on time in the Avrami expression is different for the nucleation and growth processes. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.93738 |