Nucleation and growth rate of a -Si alloys

From fitting the crystallization rate to an Arrhenius rate expression with a single activation energy we found that it is possible to distinguish a purely amorphous silicon sample from one having trace crystallinity. Whenever microcrystallites are present whether from heavy P doping or heat treatmen...

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Veröffentlicht in:Applied physics letters 1983-01, Vol.42 (1), p.90-92
Hauptverfasser: Gonzalez-Hernandez, Jesus, Tsu, Raphael
Format: Artikel
Sprache:eng
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Zusammenfassung:From fitting the crystallization rate to an Arrhenius rate expression with a single activation energy we found that it is possible to distinguish a purely amorphous silicon sample from one having trace crystallinity. Whenever microcrystallites are present whether from heavy P doping or heat treatment, the ‘‘activation energy’’ is approximately 1 eV, whereas purely amorphous silicon has an activation energy of 3–4 eV. In other words, the exponent on time in the Avrami expression is different for the nucleation and growth processes.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.93738