Temperature Dependence of the Fundamental Absorption Edge in CuGaSe sub 2

Temperature Dependence of the Fundamental Absorption Edge in CuGaSe sub 2

The temp. dependence of the fundamental absorption edge in single crystals was determined in the temp. range 15- 300 K. Above about 120 K the gap energy changes linearly with temp. with dE sub g /dT=--(2.1 plus/minus 0.1) eV/deg K. The downshift in dE sub g/dT of the I--III--VI sub 2 compounds compa...

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Veröffentlicht in:Solid state communications 1978-07, Vol.27 (4), p.449-451
Hauptverfasser: Newmann, H, Horig, W, Reccius, E
Format: Artikel
Sprache:eng
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Zusammenfassung:The temp. dependence of the fundamental absorption edge in single crystals was determined in the temp. range 15- 300 K. Above about 120 K the gap energy changes linearly with temp. with dE sub g /dT=--(2.1 plus/minus 0.1) eV/deg K. The downshift in dE sub g/dT of the I--III--VI sub 2 compounds compared to II--VI analogs is discussed accounting for the p alpha r-- alpha id hybridization of the uppermost valence band. 19 ref.--AA
ISSN:0038-1098