On the temperature distributions around dislocations in III-V compounds due to Joule heating

The nonuniform rate of creation of Joule heat due to variations in the electrical conductivity around dislocations in III-V compounds gives rise to variations in the temperature around these dislocations. The general equations and boundary conditions for this temperature distribution are derived for...

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Veröffentlicht in:Journal of applied physics 1978-06, Vol.49 (6), p.3272-3275
Hauptverfasser: Booyens, H., Vermaak, J. S., Proto, G. R.
Format: Artikel
Sprache:eng
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Zusammenfassung:The nonuniform rate of creation of Joule heat due to variations in the electrical conductivity around dislocations in III-V compounds gives rise to variations in the temperature around these dislocations. The general equations and boundary conditions for this temperature distribution are derived for any III-V compound. The specific temperature distributions around 60° and edge dislocations in n-type GaSb are calculated. It is found that the contribution of the dislocations to the temperature becomes significant within 500 Å from the core, while the gradient of temperature reaches significant values at even greater distances.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.325276