On the temperature distributions around dislocations in III-V compounds due to Joule heating
The nonuniform rate of creation of Joule heat due to variations in the electrical conductivity around dislocations in III-V compounds gives rise to variations in the temperature around these dislocations. The general equations and boundary conditions for this temperature distribution are derived for...
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Veröffentlicht in: | Journal of applied physics 1978-06, Vol.49 (6), p.3272-3275 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The nonuniform rate of creation of Joule heat due to variations in the electrical conductivity around dislocations in III-V compounds gives rise to variations in the temperature around these dislocations. The general equations and boundary conditions for this temperature distribution are derived for any III-V compound. The specific temperature distributions around 60° and edge dislocations in n-type GaSb are calculated. It is found that the contribution of the dislocations to the temperature becomes significant within 500 Å from the core, while the gradient of temperature reaches significant values at even greater distances. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.325276 |