Transient Pitting during Film Growth on Aluminum at 1000 mV vs. SCE

Transient pitting during growth of a porous anodic film on 99.999per cent Al in H2SO4 was examined by transmission electron microscopy (TEM). Anodizing was done at 1000 mV SCE, and the results were compared to films grown at higher potentials. The mass thicknesses of the films examined were in the same range and the similarity of the transient pitting structures is taken to mean the film structure depends more on mass thickness than on potential in the range studied.--D.H.W.