Electronic properties of amorphous silicon selenium films

The presence of selenium in amorphous silicon films increases the optical gap from 1.25 to 1.8 eV. At the same time, the room-temperature resistivity increases by four orders of magnitude and thermal activation energy increases from 0.16 to 0.76 and 0.41 eV for the high and low-temperature regions,...

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Veröffentlicht in:	Applied physics letters 1983-03, Vol.42 (6), p.523-524
Hauptverfasser:	WAKIM, F. G, ABO-NAMOUS, S. A, AL-JASSAR, A, HASSAN, M. A
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology Low-field transport and mobility piezoresistance Physics
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Beschreibung
Zusammenfassung:	The presence of selenium in amorphous silicon films increases the optical gap from 1.25 to 1.8 eV. At the same time, the room-temperature resistivity increases by four orders of magnitude and thermal activation energy increases from 0.16 to 0.76 and 0.41 eV for the high and low-temperature regions, respectively.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.93991