Heterojunction formation in (CdZn)S/CuInSe2 ternary solar cells

Heterojunction formation in (CdZn)S/CuInSe2 ternary solar cells

The electrical properties of (CdZn)S/CuInSe2 solar cells have been investigated by combining electron beam induced current measurements and capacitance-voltage measurements on the same device. In the as-grown device, the CuInSe2 is lightly doped n type. After baking to about 225 °C in vacuum, the Cu...

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Veröffentlicht in:Applied physics letters 1983-10, Vol.43 (7), p.658-660
Hauptverfasser: AHRENKIEL, R. K, KAZMERSKI, L. L, MATSON, R. J, OSTERWALD, C, MASSOPUST, T. P, MICKELSEN, R. A, CHEN, W. S
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Energy
Exact sciences and technology
Natural energy
Solar energy
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Zusammenfassung:The electrical properties of (CdZn)S/CuInSe2 solar cells have been investigated by combining electron beam induced current measurements and capacitance-voltage measurements on the same device. In the as-grown device, the CuInSe2 is lightly doped n type. After baking to about 225 °C in vacuum, the CuInSe2 converts to p type forming the heterojunction. Oxygen does not appear to be necessary for type conversion to occur.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.94474