A study of insulator materials used in ISFET gates
Experiments with aqueous electrolyte-insulator-semiconductor structures showed that Si 3N 4 is a satisfactory insulator on silicon whereas thermally grown SiO 2 is not. The results can be explained in terms of microcrack formation in SiO 2. The breakdown voltage was found to be relatively independen...
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| Veröffentlicht in: | Thin solid films 1978-09, Vol.53 (2), p.169-173 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Experiments with aqueous electrolyte-insulator-semiconductor structures showed that Si
3N
4 is a satisfactory insulator on silicon whereas thermally grown SiO
2 is not. The results can be explained in terms of microcrack formation in SiO
2. The breakdown voltage was found to be relatively independent of the SiO
2 thickness and crack sizes were estimated to be of the order of a few tens of ångströms. No electrically significant bulk hydration effects were found to occur in either insulator in mildly acidic solutions. |
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| ISSN: | 0040-6090 1879-2731 |
| DOI: | 10.1016/0040-6090(78)90031-7 |