A SIMS analysis of deuterium diffusion in hydrogenated amorphous silicon

Secondary ion mass spectroscopy (SIMS) has been used to measure the diffusion of deuterium in hydrogenated amorphous silicon. For a film deposited in a dc glow discharge in SiH4 at a substrate temperature of 315 °C, the diffusion data fits D (T) =1.17×10−2 exp(−1.53 eV/kT) cm2/s. This result implies...

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Veröffentlicht in:	Appl. Phys. Lett.; (United States) 1978-07, Vol.33 (1), p.81-83
Hauptverfasser:	Carlson, D. E., Magee, C. W.
Format:	Artikel
Sprache:	eng
Schlagworte:	AMORPHOUS STATE CHEMICAL REACTIONS CRYOGENIC FLUIDS DEUTERIUM DIFFUSION ELECTRIC FIELDS ELEMENTS FLUIDS HEAT TREATMENTS HYDROGEN HYDROGEN ISOTOPES HYDROGENATION ISOTOPES LIGHT NUCLEI MASS SPECTROSCOPY MATERIALS SCIENCE NONMETALS NUCLEI ODD-ODD NUCLEI SEMIMETALS SILICON SPECTROSCOPY STABLE ISOTOPES 360603 > Materials-- Properties
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Zusammenfassung:	Secondary ion mass spectroscopy (SIMS) has been used to measure the diffusion of deuterium in hydrogenated amorphous silicon. For a film deposited in a dc glow discharge in SiH4 at a substrate temperature of 315 °C, the diffusion data fits D (T) =1.17×10−2 exp(−1.53 eV/kT) cm2/s. This result implies that degradation of these films due to hydrogen out-diffusion at 100 °C will not be significant until after more than 104 years.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.90153