A study of the kinetics of recombination radiation of CdS and CdSe crystals

The characteristic decay times of recombination radiation (P‐band) in CdS (2 × 10−11 to 2.7 × 10−9 s) and CdSe (1.7 × 10−10 to 3.7 × 10−9 s) monocrystals under different exitation levels, obtained by powerful picosecond light pulses, are measured with the help of a special laser spectrochronograph with a time resolution of 2 × 10−11 s (sample temperature 77 K). A comparison of the curves obtained for the rise and decay of the intensity of luminescence with the solutions of the system of rate equations for the exciton—exciton scattering processes makes it possible to estimate the values of rate constants of exciton—exciton interaction and of binding of carriers to excitons. [Russian Text Ignored].