High resolution ion beam lithography at large gaps using stencil masks

High resolution masked ion beam lithography (MIBL) is demonstrated at large mask-to-sample gaps using two new types of membrane stencil masks. Single layer Si-rich silicon nitride (SiN) membranes and Si3N4-SiO2-Si3N4 (N-O-N) sandwich structure membranes are deposited by processes which allow the str...

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Veröffentlicht in:Applied physics letters 1983-01, Vol.42 (5), p.457-459
Hauptverfasser: Randall, J. N., Flanders, D. C., Economou, N. P., Donnelly, J. P., Bromley, E. I.
Format: Artikel
Sprache:eng
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Zusammenfassung:High resolution masked ion beam lithography (MIBL) is demonstrated at large mask-to-sample gaps using two new types of membrane stencil masks. Single layer Si-rich silicon nitride (SiN) membranes and Si3N4-SiO2-Si3N4 (N-O-N) sandwich structure membranes are deposited by processes which allow the stress in the films to be adjusted. Transmission holes are reactive-ion etched entirely through the membranes. This type of stencil mask virtually eliminates mask-induced scattering. Lines and spaces of 160 nm have been exposed in 0.5-μm polymethylmethacrylate (PMMA) at gaps as large as 275 μm, using 100-keV protons. Some of the stencil mask limitations are overcome by multiple exposures. The results suggest that MIBL can be an extremely high resolution proximity printing technique.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.93969