High resolution ion beam lithography at large gaps using stencil masks
High resolution masked ion beam lithography (MIBL) is demonstrated at large mask-to-sample gaps using two new types of membrane stencil masks. Single layer Si-rich silicon nitride (SiN) membranes and Si3N4-SiO2-Si3N4 (N-O-N) sandwich structure membranes are deposited by processes which allow the str...
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Veröffentlicht in: | Applied physics letters 1983-01, Vol.42 (5), p.457-459 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | High resolution masked ion beam lithography (MIBL) is demonstrated at large mask-to-sample gaps using two new types of membrane stencil masks. Single layer Si-rich silicon nitride (SiN) membranes and Si3N4-SiO2-Si3N4 (N-O-N) sandwich structure membranes are deposited by processes which allow the stress in the films to be adjusted. Transmission holes are reactive-ion etched entirely through the membranes. This type of stencil mask virtually eliminates mask-induced scattering. Lines and spaces of 160 nm have been exposed in 0.5-μm polymethylmethacrylate (PMMA) at gaps as large as 275 μm, using 100-keV protons. Some of the stencil mask limitations are overcome by multiple exposures. The results suggest that MIBL can be an extremely high resolution proximity printing technique. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.93969 |