Single crystals of chevrel-type compounds: Growth, stoichiometry and electrical resistivity
A series of rhombohedral Mo chalcogenides (Chevrel compounds) based on S or Se have been melted under argon pressures up to 100 atm. We have found that single crystals of an appreciable size (1 to 3 cm 3) can be grown by the Bridgman-Stockbarger technique. Density measurements on these crystals, tog...
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Veröffentlicht in: | Materials research bulletin 1978-08, Vol.13 (8), p.743-750 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A series of rhombohedral Mo chalcogenides (Chevrel compounds) based on S or Se have been melted under argon pressures up to 100 atm. We have found that single crystals of an appreciable size (1 to 3 cm
3) can be grown by the Bridgman-Stockbarger technique. Density measurements on these crystals, together with x-ray and microscopic observations lead to the conclusion that the formula M
xMo
6X
8 describes correctly the great majority of these compounds. The sulfides with M = Pb, Sn as possible exceptions seem to be stabilized by a small excess of Mo relative to the stoichiometric ratio Mo:S=6:8. No evidence for the presence of S defects was found. The electrical resistivity of PbMo
6.2S
8 has been found to vary linearly as a function of temperature in the range T
c ≤ T ≤ 50 K, the lowest measured value at the normal state being
ϱ = 90 μΩ
cm
. |
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ISSN: | 0025-5408 1873-4227 |
DOI: | 10.1016/0025-5408(78)90035-1 |