A Schottky-barrier solar cell on sliced polycrystalline GaAs
Antireflecting-metal-oxide-semiconductor (AMOS) technology has been applied to sliced wafers of polycrystalline GaAs having grain sizes of about 100 μm. Simulated AM1 sunlight efficiencies up to 14% were obtained, and studies using the scanning electron microscope showed that grain boundaries have m...
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| Veröffentlicht in: | Appl. Phys. Lett.; (United States) 1978-09, Vol.33 (5), p.401-403 |
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| container_title | Appl. Phys. Lett.; (United States) |
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| creator | Yeh, Y C M Stirn, R J |
| description | Antireflecting-metal-oxide-semiconductor (AMOS) technology has been applied to sliced wafers of polycrystalline GaAs having grain sizes of about 100 μm. Simulated AM1 sunlight efficiencies up to 14% were obtained, and studies using the scanning electron microscope showed that grain boundaries have minimal effect on short-circuit current density. However, current-voltage characteristics show some influence on open-circuit voltage. |
| doi_str_mv | 10.1063/1.90391 |
| format | Article |
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However, current-voltage characteristics show some influence on open-circuit voltage.</description><subject>CRYSTAL STRUCTURE</subject><subject>DIRECT ENERGY CONVERTERS</subject><subject>EFFICIENCY</subject><subject>ELECTRIC POTENTIAL</subject><subject>ELECTRON SCANNING</subject><subject>FABRICATION</subject><subject>GALLIUM ARSENIDE SOLAR CELLS</subject><subject>GRAIN BOUNDARIES</subject><subject>MICROSTRUCTURE</subject><subject>PHOTOELECTRIC CELLS</subject><subject>PHOTOVOLTAIC CELLS</subject><subject>SCHOTTKY EFFECT</subject><subject>SOLAR CELLS 140501 -- Solar Energy Conversion-- Photovoltaic Conversion</subject><subject>SOLAR ENERGY</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1978</creationdate><recordtype>article</recordtype><recordid>eNqN0MFKAzEQBuAgCtYqvsLiQU9bM5ndpAEvpWgVCh7Uc0hnU7qabmqSHvbt3VofwNMw8PHD_zN2DXwCXOI9TDRHDSdsBFypEgGmp2zEOcdS6hrO2UVKn8NbC8QRe5gVb7QJOX_15crG2LpYpOBtLMh5X4SuSL4l1xS74HuKfcrW-7ZzxcLO0iU7W1uf3NXfHbOPp8f3-XO5fF28zGfLkhCqXEpquJ26BomUIKUarBSgU3IqV6JGTrRGoZ3QpKQSWmmqRLUCahophwqEY3ZzzA0ptyZRmx1tKHSdo2ykUqKWYkC3R7SL4XvvUjbbNh1K2M6FfTICYVoLrf8FKwAY4N0RUgwpRbc2u9hubewNcHPY2oD53Rp_AD40bmQ</recordid><startdate>19780901</startdate><enddate>19780901</enddate><creator>Yeh, Y C M</creator><creator>Stirn, R J</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>19780901</creationdate><title>A Schottky-barrier solar cell on sliced polycrystalline GaAs</title><author>Yeh, Y C M ; Stirn, R J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c314t-6cd0a8ed3cc72c77d34713e7686b2530ccf329e29c7672979c424b1cdd66077c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1978</creationdate><topic>CRYSTAL STRUCTURE</topic><topic>DIRECT ENERGY CONVERTERS</topic><topic>EFFICIENCY</topic><topic>ELECTRIC POTENTIAL</topic><topic>ELECTRON SCANNING</topic><topic>FABRICATION</topic><topic>GALLIUM ARSENIDE SOLAR CELLS</topic><topic>GRAIN BOUNDARIES</topic><topic>MICROSTRUCTURE</topic><topic>PHOTOELECTRIC CELLS</topic><topic>PHOTOVOLTAIC CELLS</topic><topic>SCHOTTKY EFFECT</topic><topic>SOLAR CELLS 140501 -- Solar Energy Conversion-- Photovoltaic Conversion</topic><topic>SOLAR ENERGY</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yeh, Y C M</creatorcontrib><creatorcontrib>Stirn, R J</creatorcontrib><creatorcontrib>Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91103</creatorcontrib><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Appl. Phys. Lett.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yeh, Y C M</au><au>Stirn, R J</au><aucorp>Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91103</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Schottky-barrier solar cell on sliced polycrystalline GaAs</atitle><jtitle>Appl. Phys. Lett.; (United States)</jtitle><date>1978-09-01</date><risdate>1978</risdate><volume>33</volume><issue>5</issue><spage>401</spage><epage>403</epage><pages>401-403</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Antireflecting-metal-oxide-semiconductor (AMOS) technology has been applied to sliced wafers of polycrystalline GaAs having grain sizes of about 100 μm. Simulated AM1 sunlight efficiencies up to 14% were obtained, and studies using the scanning electron microscope showed that grain boundaries have minimal effect on short-circuit current density. However, current-voltage characteristics show some influence on open-circuit voltage.</abstract><cop>United States</cop><doi>10.1063/1.90391</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Appl. Phys. Lett.; (United States), 1978-09, Vol.33 (5), p.401-403 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_23185299 |
| source | AIP Digital Archive |
| subjects | CRYSTAL STRUCTURE DIRECT ENERGY CONVERTERS EFFICIENCY ELECTRIC POTENTIAL ELECTRON SCANNING FABRICATION GALLIUM ARSENIDE SOLAR CELLS GRAIN BOUNDARIES MICROSTRUCTURE PHOTOELECTRIC CELLS PHOTOVOLTAIC CELLS SCHOTTKY EFFECT SOLAR CELLS 140501 -- Solar Energy Conversion-- Photovoltaic Conversion SOLAR ENERGY |
| title | A Schottky-barrier solar cell on sliced polycrystalline GaAs |
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