A Schottky-barrier solar cell on sliced polycrystalline GaAs

A Schottky-barrier solar cell on sliced polycrystalline GaAs

Antireflecting-metal-oxide-semiconductor (AMOS) technology has been applied to sliced wafers of polycrystalline GaAs having grain sizes of about 100 μm. Simulated AM1 sunlight efficiencies up to 14% were obtained, and studies using the scanning electron microscope showed that grain boundaries have m...

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Veröffentlicht in:Appl. Phys. Lett.; (United States) 1978-09, Vol.33 (5), p.401-403
Hauptverfasser: Yeh, Y C M, Stirn, R J
Format: Artikel
Sprache:eng
Schlagworte:
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC POTENTIAL
ELECTRON SCANNING
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
GRAIN BOUNDARIES
MICROSTRUCTURE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SCHOTTKY EFFECT
SOLAR CELLS 140501 > Solar Energy Conversion-- Photovoltaic Conversion
SOLAR ENERGY
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Zusammenfassung:Antireflecting-metal-oxide-semiconductor (AMOS) technology has been applied to sliced wafers of polycrystalline GaAs having grain sizes of about 100 μm. Simulated AM1 sunlight efficiencies up to 14% were obtained, and studies using the scanning electron microscope showed that grain boundaries have minimal effect on short-circuit current density. However, current-voltage characteristics show some influence on open-circuit voltage.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.90391