Effect of high doping on the photoluminescence edge of GaAs and InP
A theoretical method for calculating the variation of optical transition energy Eg,opt in semiconductors with heavy n doping is presented. The calculations based on the Moss–Burstein shift and band-gap shrinkage take into account both exchange and Coulomb interactions, the latter being calculated fo...
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| Veröffentlicht in: | Applied physics letters 1983-02, Vol.42 (3), p.287-289 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | A theoretical method for calculating the variation of optical transition energy Eg,opt in semiconductors with heavy n doping is presented. The calculations based on the Moss–Burstein shift and band-gap shrinkage take into account both exchange and Coulomb interactions, the latter being calculated for nonparabolic bands. A comparison with the experimental values of Eg,opt for heavily n-doped GaAs and InP shows good agreement over wide ranges of temperature and doping and can satisfactorily explain photoluminescent emission at energies up to 1.65 eV in GaAs (1.8 °K) and 1.91 eV in InP (300 °K). |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.93882 |