Optical absorption edge of GaS under hydrostatic pressure
The pressure variation of the optical edge of GaS has been measured. The direct exciton has been studied up to 6 kbar at 77 K and the indirect edge up to 40 kbar at 300 K. The exciton is shown to have a coefficient of −2 ± 0.5 × 10 −6eV/bar and the indirect edge of − ll ± 1.5× 10 −6eV/bar. A discuss...
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Veröffentlicht in: | The Journal of physics and chemistry of solids 1978, Vol.39 (1), p.25-28 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The pressure variation of the optical edge of GaS has been measured. The direct exciton has been studied up to 6 kbar at 77 K and the indirect edge up to 40 kbar at 300 K. The exciton is shown to have a coefficient of −2 ± 0.5 × 10
−6eV/bar and the indirect edge of −
ll ± 1.5× 10
−6eV/bar. A discussion of the values of the pressure coefficients for direct and indirect transitions in gallium chalcogenides is given. |
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ISSN: | 0022-3697 1879-2553 |
DOI: | 10.1016/0022-3697(78)90194-4 |