Optical absorption edge of GaS under hydrostatic pressure

The pressure variation of the optical edge of GaS has been measured. The direct exciton has been studied up to 6 kbar at 77 K and the indirect edge up to 40 kbar at 300 K. The exciton is shown to have a coefficient of −2 ± 0.5 × 10 −6eV/bar and the indirect edge of − ll ± 1.5× 10 −6eV/bar. A discuss...

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Veröffentlicht in:The Journal of physics and chemistry of solids 1978, Vol.39 (1), p.25-28
Hauptverfasser: Mejatty, M., Segura, A., Le Toullec, R., Besson, J.M., Chevy, A., Fair, H.
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Sprache:eng
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Zusammenfassung:The pressure variation of the optical edge of GaS has been measured. The direct exciton has been studied up to 6 kbar at 77 K and the indirect edge up to 40 kbar at 300 K. The exciton is shown to have a coefficient of −2 ± 0.5 × 10 −6eV/bar and the indirect edge of − ll ± 1.5× 10 −6eV/bar. A discussion of the values of the pressure coefficients for direct and indirect transitions in gallium chalcogenides is given.
ISSN:0022-3697
1879-2553
DOI:10.1016/0022-3697(78)90194-4