Application of epitaxial graded-gap semiconductor layers as broad range photodetectors
The trends in photodetector development and the properties of graded-gap semiconductors are briefly outlined, and the possibilities for the effective use of the graded-gap structure as a broad range IR and visible detector are presented.
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| Veröffentlicht in: | Thin solid films 1978-05, Vol.50, p.269-272 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The trends in photodetector development and the properties of graded-gap semiconductors are briefly outlined, and the possibilities for the effective use of the graded-gap structure as a broad range IR and visible detector are presented. |
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| ISSN: | 0040-6090 1879-2731 |
| DOI: | 10.1016/0040-6090(78)90112-8 |