Uniaxial stress measurements on n-type GaAs

Uniaxial stress measurements on n-type GaAs

Measurement of the influence of 〈100〉 stress on the low-field resistivity of n-type GaAs shows a linear change to 10 k-bar and no influence of the X 1c minima. This removes the apparent discrepancy between high-stress and electro-reflectance data for the conduction band structure of GaAs.

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Veröffentlicht in:Solid state communications 1978-01, Vol.27 (3), p.219-222
Hauptverfasser: Ahmad, C.N., Adams, A.R.
Format: Artikel
Sprache:eng
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Zusammenfassung:Measurement of the influence of 〈100〉 stress on the low-field resistivity of n-type GaAs shows a linear change to 10 k-bar and no influence of the X 1c minima. This removes the apparent discrepancy between high-stress and electro-reflectance data for the conduction band structure of GaAs.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(78)90022-4