Annealing of ion-implanted silicon by an incoherent light pulse
Annealing of boron-implanted silicon by a single 15-μsec pulse from a flash lamp has been observed. The required energy density was 27 J/cm2 incident on the silicon. Electrical activity of boron was comparable to that in thermally annealed samples.
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| Veröffentlicht in: | Applied physics letters 1978-12, Vol.33 (11), p.955-957 |
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| Sprache: | eng |
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| container_end_page | 957 |
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| container_issue | 11 |
| container_start_page | 955 |
| container_title | Applied physics letters |
| container_volume | 33 |
| creator | Bomke, H. A. Berkowitz, H. L. Harmatz, M. Kronenberg, S. Lux, R. |
| description | Annealing of boron-implanted silicon by a single 15-μsec pulse from a flash lamp has been observed. The required energy density was 27 J/cm2 incident on the silicon. Electrical activity of boron was comparable to that in thermally annealed samples. |
| doi_str_mv | 10.1063/1.90232 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1978-12, Vol.33 (11), p.955-957 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_23133982 |
| source | AIP Digital Archive |
| title | Annealing of ion-implanted silicon by an incoherent light pulse |
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