Annealing of ion-implanted silicon by an incoherent light pulse

Annealing of boron-implanted silicon by a single 15-μsec pulse from a flash lamp has been observed. The required energy density was 27 J/cm2 incident on the silicon. Electrical activity of boron was comparable to that in thermally annealed samples.

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Bibliographische Detailangaben
Veröffentlicht in:	Applied physics letters 1978-12, Vol.33 (11), p.955-957
Hauptverfasser:	Bomke, H. A., Berkowitz, H. L., Harmatz, M., Kronenberg, S., Lux, R.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Annealing of boron-implanted silicon by a single 15-μsec pulse from a flash lamp has been observed. The required energy density was 27 J/cm2 incident on the silicon. Electrical activity of boron was comparable to that in thermally annealed samples.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.90232