Intensity modulation in GaAlAs metal-gap channel waveguides

Intensity modulation in GaAlAs metal-gap channel waveguides

We report a simple intensity modulator in GaAlAs waveguiding structures. The optical attenuation associated with Schottky-barrier contacts defining metal-gap channels is controlled by an applied voltage. A modulation depth of 88% was measured at a wavelength of 1.06 μm with a bias of 25 V in a devic...

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Veröffentlicht in:Applied physics letters 1978-05, Vol.32 (10), p.663-665
Hauptverfasser: Reisinger, A. R., Bellavance, D. W., Lawley, K. L.
Format: Artikel
Sprache:eng
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Zusammenfassung:We report a simple intensity modulator in GaAlAs waveguiding structures. The optical attenuation associated with Schottky-barrier contacts defining metal-gap channels is controlled by an applied voltage. A modulation depth of 88% was measured at a wavelength of 1.06 μm with a bias of 25 V in a device 8.5 mm long.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.89847