Porous silicon as an intermediate layer for thin-film solar cell

The potential of porous silicon (PS) with dual porosity structure as an intermediate layer for ultra-thin film solar cells is described. It is shown that a double-layered PS with a porosity of 20 60 % allows to grow epitaxial Si film at medium temperature (725°–800°C) and at the same time serves as...

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Veröffentlicht in:Solar energy materials and solar cells 2001, Vol.65 (1), p.477-485
Hauptverfasser: Bilyalov, R, Stalmans, L, Beaucarne, G, Loo, R, Caymax, M, Poortmans, J, Nijs, J
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container_end_page 485
container_issue 1
container_start_page 477
container_title Solar energy materials and solar cells
container_volume 65
creator Bilyalov, R
Stalmans, L
Beaucarne, G
Loo, R
Caymax, M
Poortmans, J
Nijs, J
description The potential of porous silicon (PS) with dual porosity structure as an intermediate layer for ultra-thin film solar cells is described. It is shown that a double-layered PS with a porosity of 20 60 % allows to grow epitaxial Si film at medium temperature (725°–800°C) and at the same time serves as a gettering/diffusion barrier for impurities from potentially contaminated low-cost substrate. A 3.5 μm thin-film cell with reasonable efficiency is realized using such a PS intermediate layer.
doi_str_mv 10.1016/S0927-0248(00)00130-6
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source Elsevier ScienceDirect Journals Complete
subjects Applied sciences
Energy
Exact sciences and technology
Natural energy
Photovoltaic conversion
Porous silicon
Si solar cells
Solar cells. Photoelectrochemical cells
Solar energy
Thin films
title Porous silicon as an intermediate layer for thin-film solar cell
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