Porous silicon as an intermediate layer for thin-film solar cell

Porous silicon as an intermediate layer for thin-film solar cell

The potential of porous silicon (PS) with dual porosity structure as an intermediate layer for ultra-thin film solar cells is described. It is shown that a double-layered PS with a porosity of 20 60 % allows to grow epitaxial Si film at medium temperature (725°–800°C) and at the same time serves as...

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Veröffentlicht in:Solar energy materials and solar cells 2001, Vol.65 (1), p.477-485
Hauptverfasser: Bilyalov, R, Stalmans, L, Beaucarne, G, Loo, R, Caymax, M, Poortmans, J, Nijs, J
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Energy
Exact sciences and technology
Natural energy
Photovoltaic conversion
Porous silicon
Si solar cells
Solar cells. Photoelectrochemical cells
Solar energy
Thin films
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Zusammenfassung:The potential of porous silicon (PS) with dual porosity structure as an intermediate layer for ultra-thin film solar cells is described. It is shown that a double-layered PS with a porosity of 20 60 % allows to grow epitaxial Si film at medium temperature (725°–800°C) and at the same time serves as a gettering/diffusion barrier for impurities from potentially contaminated low-cost substrate. A 3.5 μm thin-film cell with reasonable efficiency is realized using such a PS intermediate layer.
ISSN:0927-0248
1879-3398
DOI:10.1016/S0927-0248(00)00130-6