Channel-length effects in quarter-micrometer gate-length GaAs MESFET's

The electrical performance of 0.25-µm gate-length GaAs MESFET's with channel lengths (i.e., source-drain spacings) of 2.1 and 0.5µm is compared. An extremely short channel length has been found experimentally to lead to significant increases in the electron average drift velocity, transconducta...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE electron device letters 1983-09, Vol.4 (9), p.326-328
Hauptverfasser:	Chao, P.C., Smith, P.M., Wanuga, S., Perkins, W.H., Wolf, E.D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Chaos Chemicals Doping Electron mobility Electronics Exact sciences and technology FETs Gallium arsenide MESFETs Resists Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transconductance Transducers Transistors
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!