High-Performance WSe2 Photodetector Based on a Laser-Induced p–n Junction

Two-dimensional heterojunctions exhibit many unique features in nanoelectronic and optoelectronic devices. However, heterojunction engineering requires a complicated alignment process and some defects are inevitably introduced during material preparation. In this work, a laser scanning technique is used to construct a lateral WSe2 p–n junction. The laser-scanned region shows p-type behavior, and the adjacent region is electrically n-doped with a proper gate voltage. The laser-oxidized product WO x is found to be responsible for this p-type doping. After laser scanning, WSe2 displays a change from ambipolar to unipolar p-type property. A significant photocurrent emerges at the p–n junction. Therefore, a self-powered WSe2 photodetector can be fabricated based on this junction, which presents a large photoswitching ratio of 106, a high photoresponsivity of 800 mA W–1, and a short photoresponse time with long-term stability and reproducibility. Therefore, this selective laser-doping method is prospective in future electronic applications.