Variable range hopping in Al implanted sapphire

Variable range hopping conductivity (i.e. resistivity proportional to exp T−1/4) has been observed in Al implanted sapphire. The conductivity of these implanted layers was studied as a function of implanted doses.

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Veröffentlicht in:	Applied physics letters 1982-01, Vol.40 (8), p.707-708
Hauptverfasser:	Hauser, J. J., Rodgers, J. W.
Format:	Artikel
Sprache:	eng
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description	Variable range hopping conductivity (i.e. resistivity proportional to exp T−1/4) has been observed in Al implanted sapphire. The conductivity of these implanted layers was studied as a function of implanted doses.
doi_str_mv	10.1063/1.93242
format	Article
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identifier	ISSN: 0003-6951
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source	AIP Digital Archive
title	Variable range hopping in Al implanted sapphire
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