Variable range hopping in Al implanted sapphire

Variable range hopping conductivity (i.e. resistivity proportional to exp T−1/4) has been observed in Al implanted sapphire. The conductivity of these implanted layers was studied as a function of implanted doses.

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Bibliographische Detailangaben
Veröffentlicht in:	Applied physics letters 1982-01, Vol.40 (8), p.707-708
Hauptverfasser:	Hauser, J. J., Rodgers, J. W.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Variable range hopping conductivity (i.e. resistivity proportional to exp T−1/4) has been observed in Al implanted sapphire. The conductivity of these implanted layers was studied as a function of implanted doses.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.93242