Temperature dependence of the Hall factor and the conductivity mobility in p -type silicon

We have measured the Hall coefficient of ultra pure p-type silicon as a function of both magnetic field and temperature in the range 20–50 K, where acoustic phonon scattering dominates. The temperature dependences of the Hall factor and both the Hall and the conductivity mobilities have been determi...

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Veröffentlicht in:Journal of applied physics 1982-10, Vol.53 (10), p.6880-6884
Hauptverfasser: Mitchel, W. C., Hemenger, P. M.
Format: Artikel
Sprache:eng
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Zusammenfassung:We have measured the Hall coefficient of ultra pure p-type silicon as a function of both magnetic field and temperature in the range 20–50 K, where acoustic phonon scattering dominates. The temperature dependences of the Hall factor and both the Hall and the conductivity mobilities have been determined. The Hall factor was found to have a small deviation from the generally accepted value of 3π/8 and to be slightly temperature dependent. The temperature dependence of the conductivity mobility was found to be T−1.75±0.05.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.330028