High-efficiency p +- n - n + back-surface-field silicon solar cells

The design and fabrication of high-efficiency p+-n-n+ back-surface-field silicon solar cells are described. The fabrication process has been developed to yield maximum attainable carrier lifetimes (∼0.7 msec) in the base region of the cell, thereby allowing the back n-n+ junction to effectively enha...

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Veröffentlicht in:	Applied physics letters 1978-08, Vol.33 (3), p.238-240
Hauptverfasser:	Fossum, J. G., Burgess, E. L.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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