Hot electron thermal noise models for FETs
The electrical and thermal noise properties of silicon JFETs and MOS FETs operating under high electric field conditions in the channel are considered in this work. Graphical results are presented for suitable for holes in silicon and suitable for electrons in silicon. In addition to providing a con...
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| Veröffentlicht in: | International journal of electronics 1978-03, Vol.44 (3), p.257-272 |
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| container_issue | 3 |
| container_start_page | 257 |
| container_title | International journal of electronics |
| container_volume | 44 |
| creator | TROFIMENKOFF, F. N. HASLETT, J. W. SMALLWOOD, R. E. |
| description | The electrical and thermal noise properties of silicon JFETs and MOS FETs operating under high electric field conditions in the channel are considered in this work. Graphical results are presented for
suitable for holes in silicon and
suitable for electrons in silicon. In addition to providing a convenient scheme for carrying out thermal noise calculations for all β
1
β
2
, for both holes and electrons in silicon FETs, this work serves to correct errors in previously reported results. |
| doi_str_mv | 10.1080/00207217808900818 |
| format | Article |
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suitable for holes in silicon and
suitable for electrons in silicon. In addition to providing a convenient scheme for carrying out thermal noise calculations for all β
1
β
2
, for both holes and electrons in silicon FETs, this work serves to correct errors in previously reported results.</description><identifier>ISSN: 0020-7217</identifier><identifier>EISSN: 1362-3060</identifier><identifier>DOI: 10.1080/00207217808900818</identifier><language>eng</language><publisher>Taylor & Francis Group</publisher><ispartof>International journal of electronics, 1978-03, Vol.44 (3), p.257-272</ispartof><rights>Copyright Taylor & Francis Group, LLC 1978</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-bdbd3ebb4cfee088ca331639c8cd36edc3b967025d0f611fd4e85b0b7cf97d1e3</citedby><cites>FETCH-LOGICAL-c327t-bdbd3ebb4cfee088ca331639c8cd36edc3b967025d0f611fd4e85b0b7cf97d1e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.tandfonline.com/doi/pdf/10.1080/00207217808900818$$EPDF$$P50$$Ginformaworld$$H</linktopdf><linktohtml>$$Uhttps://www.tandfonline.com/doi/full/10.1080/00207217808900818$$EHTML$$P50$$Ginformaworld$$H</linktohtml><link.rule.ids>314,780,784,27923,27924,59646,60435</link.rule.ids></links><search><creatorcontrib>TROFIMENKOFF, F. N.</creatorcontrib><creatorcontrib>HASLETT, J. W.</creatorcontrib><creatorcontrib>SMALLWOOD, R. E.</creatorcontrib><title>Hot electron thermal noise models for FETs</title><title>International journal of electronics</title><description>The electrical and thermal noise properties of silicon JFETs and MOS FETs operating under high electric field conditions in the channel are considered in this work. Graphical results are presented for
suitable for holes in silicon and
suitable for electrons in silicon. In addition to providing a convenient scheme for carrying out thermal noise calculations for all β
1
β
2
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suitable for holes in silicon and
suitable for electrons in silicon. In addition to providing a convenient scheme for carrying out thermal noise calculations for all β
1
β
2
, for both holes and electrons in silicon FETs, this work serves to correct errors in previously reported results.</abstract><pub>Taylor & Francis Group</pub><doi>10.1080/00207217808900818</doi><tpages>16</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0020-7217 |
| ispartof | International journal of electronics, 1978-03, Vol.44 (3), p.257-272 |
| issn | 0020-7217 1362-3060 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_23074018 |
| source | Taylor & Francis:Master (3349 titles) |
| title | Hot electron thermal noise models for FETs |
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