Hot electron thermal noise models for FETs

The electrical and thermal noise properties of silicon JFETs and MOS FETs operating under high electric field conditions in the channel are considered in this work. Graphical results are presented for suitable for holes in silicon and suitable for electrons in silicon. In addition to providing a convenient scheme for carrying out thermal noise calculations for all β 1 β 2 , for both holes and electrons in silicon FETs, this work serves to correct errors in previously reported results.