Freeing the Polarons to Facilitate Charge Transport in BiVO4 from Oxygen Vacancies with an Oxidative 2D Precursor

The BiVO4 photoelectrochemical (PEC) electrode in tandem with a photovoltaic (PV) cell has shown great potential to become a compact and cost‐efficient device for solar hydrogen generation. However, the PEC part is still facing problems such as the poor charge transport efficiency owing to the drag...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Angewandte Chemie International Edition 2019-12, Vol.58 (52), p.19087-19095
Hauptverfasser: Qiu, Weitao, Xiao, Shuang, Ke, Jingwen, Wang, Zheng, Tang, Songtao, Zhang, Kai, Qian, Wei, Huang, Yongchao, Huang, Duan, Tong, Yexiang, Yang, Shihe
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The BiVO4 photoelectrochemical (PEC) electrode in tandem with a photovoltaic (PV) cell has shown great potential to become a compact and cost‐efficient device for solar hydrogen generation. However, the PEC part is still facing problems such as the poor charge transport efficiency owing to the drag of oxygen vacancy bound polarons. In the present work, to effectively suppress oxygen vacancy formation, a new route has been developed to synthesize BiVO4 photoanodes by using a highly oxidative two‐dimensional (2D) precursor, bismuth oxyiodate (BiOIO3), as an internal oxidant. With the reduced defects, namely the oxygen vacancies, the bound polarons were released, enabling a fast charge transport inside BiVO4 and doubling the performance in tandem devices based on the oxygen vacancy eliminated BiVO4. This work is a new avenue for elaborately designing the precursor and breaking the limitation of charge transport for highly efficient PEC‐PV solar fuel devices. Polarons bound to oxygen vacancies limit the charge transport in BiVO4 and hinder its application in compact PEC‐PV tandem cell. A highly oxidative two‐dimensional (2D) precursor, bismuth oxyiodate (BiOIO3), is used to synthesize BiVO4, effectively suppressing oxygen vacancy formation in BiVO4, enabling a fast charge transport and boosting the overall device performance.
ISSN:1433-7851
1521-3773
DOI:10.1002/anie.201912475